IXTA182N055T

Power Field-Effect Transistor, 182A I(D), 55V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power360W

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Ixys IXTA182N055T technical specifications.

Package/Case	TO-263-3
Continuous Drain Current (ID)	182A
Drain to Source Breakdown Voltage	55V
Drain to Source Resistance	5mR
Drain to Source Voltage (Vdss)	55V
Fall Time	38ns
Input Capacitance	4.85nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	360W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	360W
Rds On Max	5mR
RoHS Compliant	Yes
Series	TrenchMV™
Turn-Off Delay Time	53ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.