Power Field-Effect Transistor, 32A I(D), 200V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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Ixys IXTA32N20T technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 72MR |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.76nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
| RoHS | Compliant |
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