The IXTA4N80P is a high-power N-channel transistor with a breakdown voltage of 800V and a continuous drain current of 3.6A. It features a low on-resistance of 3.4 ohms and a fast switching time of 29ns. The device is packaged in a TO-263-3 surface mount package and is suitable for operation over a temperature range of -55°C to 150°C. The IXTA4N80P is compliant with RoHS regulations and is available in quantities of 50 per rail/Tube packaging.
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| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 750pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 3.4R |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 60ns |
| RoHS | Compliant |
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