The IXTA5N50P is a high-voltage N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.8A and a current rating of 5A. The device features a drain to source breakdown voltage of 500V and a drain to source resistance of 1.4R. It is packaged in a TO-263-3 surface mount package and is lead free and RoHS compliant.
PackageTO-263-3
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTA5N50P technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.8A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTA5N50P Datasheet
Download the complete datasheet for Ixys IXTA5N50P to view detailed technical specifications.
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