The IXTA80N10T is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 80A. The device has a maximum power dissipation of 230W and is packaged in a TO-263 surface mount package. The IXTA80N10T is RoHS compliant and lead free.
Sign in to ask questions about the Ixys IXTA80N10T datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXTA80N10T technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.04nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 40ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTA80N10T to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
