Power Field-Effect Transistor, 90A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263AA, 3 PIN
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Ixys IXTA90N055T2 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8.4mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.77nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 8.4mR |
| RoHS Compliant | Yes |
| Series | TrenchT2™ |
| Turn-Off Delay Time | 39ns |
| RoHS | Compliant |
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