The IXTC75N10 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 100V and a maximum power dissipation of 230W. The device is packaged in a through-hole package and is RoHS compliant. The IXTC75N10 has a maximum drain to source resistance of 20mR and a turn-off delay time of 100ns. It is suitable for high-current applications.
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Ixys IXTC75N10 technical specifications.
| Continuous Drain Current (ID) | 72A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 230W |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 100ns |
| RoHS | Compliant |
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