N-Channel Power MOSFET, featuring a 250V Drain to Source Breakdown Voltage and 110A Continuous Drain Current. This silicon Metal-oxide Semiconductor FET offers a low 24mΩ Drain to Source On Resistance. Designed for through-hole mounting in a TO-247AD package, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 694W. Key switching characteristics include a 27ns fall time and 60ns turn-off delay time.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power694W
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Technical Specifications
Ixys IXTH110N25T technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 24MR |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 694W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 694W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH110N25T Datasheet
Download the complete datasheet for Ixys IXTH110N25T to view detailed technical specifications.
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