The IXTH12N100 is a 1kV N-channel MOSFET with a maximum continuous drain current of 12A and a maximum drain to source resistance of 1.05 ohms. It has a maximum power dissipation of 300W and is packaged in a TO-247-3 package. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. It is available in a lead-free version and has a maximum input capacitance of 4nF.
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Ixys IXTH12N100 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 1.05R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 1.05R |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 62ns |
| RoHS | Compliant |
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