N-Channel Power MOSFET, featuring 1100V drain-source breakdown voltage and 13A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 920mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247-3 package, it supports a maximum power dissipation of 360W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 36ns fall time and 80ns turn-off delay time.
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Ixys IXTH13N110 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 1.1kV |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 1.1kV |
| Drain-source On Resistance-Max | 920mR |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.65nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 920mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 80ns |
| DC Rated Voltage | 1.1kV |
| RoHS | Compliant |
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