N-Channel Power MOSFET, TO-247-3 package, featuring 1000V Drain to Source Breakdown Voltage (Vdss) and 14A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 820mΩ Drain to Source Resistance (Rds On Max) and a maximum power dissipation of 360W. Designed for through-hole mounting, it operates within a temperature range of -55°C to 150°C and includes a 20V Gate to Source Voltage (Vgs) rating. RoHS compliant with a 36ns fall time and 80ns turn-off delay.
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Ixys IXTH14N100 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 820mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Dual Supply Voltage | 1kV |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.65nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Nominal Vgs | 4.5V |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 820mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 80ns |
| RoHS | Compliant |
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