The IXTH14N80 is a high-power N-channel MOSFET with a maximum drain-to-source breakdown voltage of 800V and a continuous drain current of 14A. It features a drain-to-source resistance of 700mR and a maximum power dissipation of 300W. The device is packaged in a TO-247-3 package and is suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C, and the device is RoHS compliant.
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Ixys IXTH14N80 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 700mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 63ns |
| RoHS | Compliant |
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