The IXTH160N10T is an N-channel TrenchMV MOSFET with a maximum drain to source breakdown voltage of 100V and a continuous drain current of 160A. It features a drain to source resistance of 7mR and a maximum power dissipation of 430W. The device is packaged in a TO-247-3 package and is designed for through hole mounting. The operating temperature range is -55°C to 175°C, and the device is compliant with RoHS standards.
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| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 7mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 7MR |
| Fall Time | 42ns |
| Input Capacitance | 6.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 430W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 430W |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 49ns |
| RoHS | Compliant |
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