The IXTH182N055T is a high-power N-channel MOSFET from Ixys, featuring a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current of 182A and a drain to source breakdown voltage of 55V. The device also has a maximum power dissipation of 360W and a drain to source resistance of 5mR. It is packaged in a TO-247-3 flange mount package and is compliant with RoHS regulations.
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Ixys IXTH182N055T technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 182A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 38ns |
| Input Capacitance | 4.85nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 53ns |
| RoHS | Compliant |
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