N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 24A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 230mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247AD package, it operates within a -55°C to 150°C temperature range and supports up to 300W power dissipation. Key electrical characteristics include a 4V nominal gate-source threshold voltage and a 4.2nF input capacitance.
PackageTO-247AD
Current Rating24A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXTH24N50 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 24A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 230mR |
| Dual Supply Voltage | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 230mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH24N50 Datasheet
Download the complete datasheet for Ixys IXTH24N50 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.