P-channel MOSFET, designed for high-power applications. Features a 200V drain-to-source breakdown voltage and a continuous drain current of 24A. Offers a low on-resistance of 150mΩ maximum. Packaged in a TO-247AD through-hole mount with a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXTH24P20 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXTH24P20 technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 24A |
| Current Rating | -24A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 68ns |
| DC Rated Voltage | -200V |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTH24P20 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
