P-channel MOSFET, designed for high-power applications. Features a 200V drain-to-source breakdown voltage and a continuous drain current of 24A. Offers a low on-resistance of 150mΩ maximum. Packaged in a TO-247AD through-hole mount with a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-247AD
Current Rating-24A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Ixys IXTH24P20 technical specifications.
General
Package/Case
TO-247AD
Continuous Drain Current (ID)
24A
Current Rating
-24A
Drain to Source Breakdown Voltage
-200V
Drain to Source Resistance
110mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
150mR
Fall Time
28ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
150mR
RoHS Compliant
Yes
Turn-Off Delay Time
68ns
DC Rated Voltage
-200V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTH24P20 Datasheet
Download the complete datasheet for Ixys IXTH24P20 to view detailed technical specifications.
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