P-channel MOSFET, designed for high-power applications. Features a 200V drain-to-source breakdown voltage and a continuous drain current of 24A. Offers a low on-resistance of 150mΩ maximum. Packaged in a TO-247AD through-hole mount with a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-247AD
Current Rating-24A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Ixys IXTH24P20 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 24A |
| Current Rating | -24A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 150mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 68ns |
| DC Rated Voltage | -200V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH24P20 Datasheet
Download the complete datasheet for Ixys IXTH24P20 to view detailed technical specifications.
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