The IXTH30N50 is a N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 30A. The device has a maximum power dissipation of 360W and a drain to source resistance of 170mR. It is packaged in a TO-247-3 package and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXTH30N50 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXTH30N50 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.68nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 360W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 360W |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 110ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTH30N50 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
