N-channel power MOSFET featuring 300V drain-source breakdown voltage and 40A continuous drain current. Offers a low 85mΩ drain-source on-resistance at a nominal gate-source voltage of 4V. This single-element silicon FET is housed in a TO-247AD package for through-hole mounting. Maximum power dissipation is rated at 300W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-247AD
Current Rating40A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTH40N30 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 85mR |
| Dual Supply Voltage | 300V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 75ns |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH40N30 Datasheet
Download the complete datasheet for Ixys IXTH40N30 to view detailed technical specifications.
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