N-Channel Power MOSFET, 200V Drain-Source Breakdown Voltage, 50A Continuous Drain Current, and 45mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a 3-pin TO-247AD package for through-hole mounting. With a 300W Max Power Dissipation and 16ns fall time, it is suitable for demanding applications. RoHS compliant and lead-free.
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Ixys IXTH50N20 technical specifications.
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 45MR |
| Dual Supply Voltage | 200V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 72ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
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