IXTH50N20

N-Channel MOSFET, 200V, 50A, 45mR Rds(on), TO-247AD

N-Channel Power MOSFET, 200V Drain-Source Breakdown Voltage, 50A Continuous Drain Current, and 45mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a 3-pin TO-247AD package for through-hole mounting. With a 300W Max Power Dissipation and 16ns fall time, it is suitable for demanding applications. RoHS compliant and lead-free.

PackageTO-247AD

Current Rating50A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Ixys IXTH50N20 technical specifications.

General

Package/Case	TO-247AD
Continuous Drain Current (ID)	50A
Current Rating	50A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	45mR
Drain to Source Voltage (Vdss)	200V
Drain-source On Resistance-Max	45MR
Dual Supply Voltage	200V
Fall Time	16ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	4.6nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Through Hole
Nominal Vgs	4V
Number of Elements	1
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Radiation Hardening	No
Rds On Max	45mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	MegaMOS™
Threshold Voltage	4V
Turn-Off Delay Time	72ns
DC Rated Voltage	200V