N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 75A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 20mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247AD package, it supports a maximum power dissipation of 300W and operates within a temperature range of -55°C to 150°C. Key specifications include a 4V threshold voltage and 30ns fall time.
PackageTO-247AD
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTH75N10 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 20MR |
| Dual Supply Voltage | 100V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTH75N10 Datasheet
Download the complete datasheet for Ixys IXTH75N10 to view detailed technical specifications.
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