N-Channel Power MOSFET, 200V Vdss, 110A Continuous Drain Current. Features 24mΩ Rds On, 960W Max Power Dissipation, and 23nF Input Capacitance. Packaged in a TO-264, through-hole mount, 3-pin configuration. Operates from -55°C to 150°C, RoHS compliant, and lead-free.
Ixys IXTK110N20L2 technical specifications.
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance | 23nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 960W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTK110N20L2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.