The IXTK110N30 is a high-power N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 110A and a drain to source breakdown voltage of 300V. The device features a low drain to source resistance of 26mR and a maximum power dissipation of 730W. It is packaged in a TO-264-3 package and is available in bulk quantities.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power730W
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Technical Specifications
Ixys IXTK110N30 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 730W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 730W |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK110N30 Datasheet
Download the complete datasheet for Ixys IXTK110N30 to view detailed technical specifications.
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