The IXTK128N15 is a high-power N-channel transistor with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 150V and a continuous drain current of 128A. The device has a maximum power dissipation of 540W and a drain to source resistance of 15mR. It is packaged in a TO-264-3 case and is available in a bulk packaging quantity of 25 units. The IXTK128N15 is RoHS compliant and is part of the MegaMOS series.
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Ixys IXTK128N15 technical specifications.
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 128A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 115ns |
| RoHS | Compliant |
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