N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss), 140A Continuous Drain Current (ID), and 18mΩ Drain-Source On-Resistance (Rds On Max). Features 800W Max Power Dissipation, 175°C Max Operating Temperature, and 90ns Fall Time. Packaged in TO-264 with through-hole mounting. RoHS compliant.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power800W
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Technical Specifications
Ixys IXTK140N20P technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 140A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 18MR |
| Fall Time | 90ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 800W |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHT™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 150ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK140N20P Datasheet
Download the complete datasheet for Ixys IXTK140N20P to view detailed technical specifications.
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