Ixys
IXTK160N20
Power Field-Effect Transistor, 160A I(D), 200V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
Power Field-Effect Transistor, 160A I(D), 200V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power730W
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Technical Specifications
Ixys IXTK160N20 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 160A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 13MR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 12.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 730W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 730W |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 150ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK160N20 Datasheet
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