
The IXTK180N15 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 150V and a drain to source resistance of 9mR. The device is packaged in a TO-264-3 package and is mounted through a hole. It is lead-free and RoHS compliant, and is part of the MegaMOS series.
Ixys IXTK180N15 technical specifications.
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 9MR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 730W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 730W |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 120ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTK180N15 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
