The IXTK21N100 is a high-power N-channel MOSFET with a breakdown voltage of 1kV and a continuous drain current of 21A. It features a maximum power dissipation of 500W and a gate to source voltage of 20V. The device is packaged in a TO-264-3 package and is suitable for high-temperature operation, with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The IXTK21N100 is RoHS compliant and is available in a package quantity of 25.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXTK21N100 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 100ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK21N100 Datasheet
Download the complete datasheet for Ixys IXTK21N100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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