Power Field-Effect Transistor, 250A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN
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Ixys IXTK250N10 technical specifications.
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 250A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 12.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 730W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 730W |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 120ns |
| RoHS | Compliant |
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