N-Channel Power MOSFET featuring 500V Drain-Source Breakdown Voltage and 46A Continuous Drain Current. Offers a low 160mΩ Drain-Source On-Resistance. Designed for through-hole mounting in a TO-264 package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 700W. Key switching parameters include a 40ns turn-on delay and 42ns fall time.
PackageTO-264
MountingThrough Hole
PolarityN-CHANNEL
Power700W
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Technical Specifications
Ixys IXTK46N50L technical specifications.
General
| Package/Case | TO-264 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 160MR |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26.16mm |
| Input Capacitance | 7nF |
| Lead Free | Lead Free |
| Length | 19.96mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 40ns |
| Width | 5.13mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK46N50L Datasheet
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