N-Channel Power MOSFET, 2500V Drain-to-Source Voltage (Vdss), 5A Continuous Drain Current (ID), and 8.8 Ohm Max On-Resistance (Rds On). This silicon Metal-oxide Semiconductor Field-Effect Transistor features a TO-264-3 package for through-hole mounting, with a maximum power dissipation of 960W. It includes an input capacitance of 8.56nF and is RoHS compliant and lead-free.
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| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 2.5kV |
| Input Capacitance | 8.56nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 960W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Rds On Max | 8.8R |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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