IXTK5N250

N-Channel Power MOSFET, 2500V Drain-to-Source Voltage (Vdss), 5A Continuous Drain Current (ID), and 8.8 Ohm Max On-Resistance (Rds On). This silicon Metal-oxide Semiconductor Field-Effect Transistor features a TO-264-3 package for through-hole mounting, with a maximum power dissipation of 960W. It includes an input capacitance of 8.56nF and is RoHS compliant and lead-free.