The Ixys IXTK80N25 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum drain to source breakdown voltage of 250V and a maximum continuous drain current of 80A. The device has a maximum power dissipation of 540W and a maximum drain to source on resistance of 33mR. It is packaged in a TO-264-3 package and is lead-free and RoHS compliant.
PackageTO-264-3
MountingThrough Hole
PolarityN-CHANNEL
Power540W
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Technical Specifications
Ixys IXTK80N25 technical specifications.
General
| Package/Case | TO-264-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 33MR |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 540W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | MegaMOS™ |
| Turn-Off Delay Time | 88ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTK80N25 Datasheet
Download the complete datasheet for Ixys IXTK80N25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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