The IXTM12N90 is a high-power N-channel MOSFET with a breakdown voltage of 900V and a continuous drain current of 12A. It has a power dissipation of 300W and a maximum operating temperature of 150°C. The device is packaged in a TO-204AA flange mount and is RoHS compliant. It features a gate to source voltage of 20V and a drain to source resistance of 900mR.
PackageTO-204AA
Resistance0.9R
PolarityN-CHANNEL
Power300W
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Technical Specifications
Ixys IXTM12N90 technical specifications.
General
| Package/Case | TO-204AA |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 900mR |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Resistance | 0.9R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 63ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTM12N90 Datasheet
Download the complete datasheet for Ixys IXTM12N90 to view detailed technical specifications.
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