IXTM12N90

Name: IXTM12N90 Ixys
Brand: Ixys
SKU: IXTM12N90

Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-204AA, 2 PIN

PackageTO-204AA

Resistance0.9R

PolarityN-CHANNEL

Power300W

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Ixys IXTM12N90 technical specifications.

Package/Case	TO-204AA
Continuous Drain Current (ID)	12A
Drain to Source Breakdown Voltage	900V
Drain to Source Resistance	900mR
Fall Time	32ns
Gate to Source Voltage (Vgs)	20V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Package Quantity	25
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Resistance	0.9R
RoHS Compliant	Yes
Turn-Off Delay Time	63ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.