P-channel MOSFET module with 100V drain-source voltage and 210A continuous drain current. Features low 7.5mΩ Rds On and high 830W power dissipation. Designed for chassis mounting in a SOT-227-4 package. Operates across a wide temperature range from -55°C to 150°C, with 69.5nF input capacitance. RoHS compliant.
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Ixys IXTN210P10T technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 210A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 69.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Chassis Mount |
| Packaging | Rail/Tube |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | TrenchP™ |
| RoHS | Compliant |
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