The IXTN30N100L is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 30A and a drain to source breakdown voltage of 1kV. The device is packaged in a SOT-227-4 plastic package and is RoHS compliant. It is suitable for high-power applications and can dissipate up to 800W of power.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 450MR |
| Fall Time | 78ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 13.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 800W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 100ns |
| RoHS | Compliant |
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