Power Field-Effect Transistor, 36A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 120MR |
| Dual Supply Voltage | 500V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 400W |
| Mount | Chassis Mount |
| Nominal Vgs | 5V |
| Packaging | Rail/Tube |
| Power Dissipation | 400W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| RoHS | Compliant |
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