IXTN46N50L

N-Channel Power MOSFET, 500V Vds, 46A Continuous Drain Current (ID), and 160mΩ Max Drain-Source On-Resistance (Rds On). This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a SOT-227B MINIBLOC-4 package for chassis or panel mounting. With a maximum power dissipation of 700W and operating temperatures from -55°C to 150°C, it offers fast switching with turn-on delay of 40ns and fall time of 42ns. This RoHS compliant component is designed for high-power applications.