N-Channel Power MOSFET, 500V Vds, 46A Continuous Drain Current (ID), and 160mΩ Max Drain-Source On-Resistance (Rds On). This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a SOT-227B MINIBLOC-4 package for chassis or panel mounting. With a maximum power dissipation of 700W and operating temperatures from -55°C to 150°C, it offers fast switching with turn-on delay of 40ns and fall time of 42ns. This RoHS compliant component is designed for high-power applications.
PackageSOT-227-4
MountingChassis Mount, Panel, Screw
PolarityN-CHANNEL
Power700W
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Technical Specifications
Ixys IXTN46N50L technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 160mR |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 7nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Panel, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 40ns |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTN46N50L Datasheet
Download the complete datasheet for Ixys IXTN46N50L to view detailed technical specifications.
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