N-Channel Power MOSFET featuring 500V drain-source voltage and 53A continuous drain current. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 100mΩ and a nominal gate-source threshold voltage of 2.5V. Designed for chassis mounting in a SOT-227-4 package, it supports a maximum power dissipation of 735W and operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and lead-free.
PackageSOT-227-4
MountingChassis Mount
Power735W
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Technical Specifications
Ixys IXTN60N50L2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 100MR |
| Input Capacitance | 24nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 735W |
| Mount | Chassis Mount |
| Nominal Vgs | 2.5V |
| Packaging | Rail/Tube |
| Power Dissipation | 735W |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Linear L2™ |
| Threshold Voltage | 2.5V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTN60N50L2 Datasheet
Download the complete datasheet for Ixys IXTN60N50L2 to view detailed technical specifications.
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