N-Channel Power MOSFET, 500V Vds, 62A Continuous Drain Current (ID), and 100mΩ Rds On. Features a 1-element silicon construction with a Metal-Oxide Semiconductor FET design. This component offers a maximum power dissipation of 800W and operates within a temperature range of -55°C to 150°C. Designed for chassis mount and panel applications, it is packaged in SOT-227B (miniBLOC-4) and is RoHS compliant.
PackageSOT-227-4
MountingChassis Mount, Panel, Screw
PolarityN-CHANNEL
Power800W
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Technical Specifications
Ixys IXTN62N50L technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 11.5nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800W |
| Mount | Chassis Mount, Panel, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 800W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 36ns |
| Width | 25.42mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTN62N50L Datasheet
Download the complete datasheet for Ixys IXTN62N50L to view detailed technical specifications.
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