Ixys
IXTP08N120P
Power Field-Effect Transistor, 0.8A I(D), 1200V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Power Field-Effect Transistor, 0.8A I(D), 1200V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Ixys IXTP08N120P technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 800mA |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Input Capacitance | 333pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Rds On Max | 25R |
| RoHS Compliant | Yes |
| Series | Polar™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP08N120P Datasheet
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