Ixys
IXTP10N60PM
Power Field-Effect Transistor, 5A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220AB
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP10N60PM technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
5A
Current Rating
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
740mR
Drain to Source Voltage (Vdss)
600V
Fall Time
18ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.61nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Rds On Max
740mR
RoHS Compliant
Yes
Series
PolarHV™
Turn-Off Delay Time
55ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP10N60PM Datasheet
Download the complete datasheet for Ixys IXTP10N60PM to view detailed technical specifications.
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