Ixys
IXTP120P065T
Power Field-Effect Transistor, 120A I(D), 65V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityP-CHANNEL
Power298W
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Technical Specifications
Ixys IXTP120P065T technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
-65V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
65V
Fall Time
21ns
Gate to Source Voltage (Vgs)
15V
Input Capacitance
13.2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
298W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
298W
Rds On Max
10mR
RoHS Compliant
Yes
Series
TrenchP™
Turn-Off Delay Time
38ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP120P065T Datasheet
Download the complete datasheet for Ixys IXTP120P065T to view detailed technical specifications.
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