Ixys
IXTP15P15T
Power Field-Effect Transistor, 15A I(D), 150V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 15A I(D), 150V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Ixys IXTP15P15T technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 150V |
| Input Capacitance | 3.65nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 240mR |
| RoHS Compliant | Yes |
| Series | TrenchP™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP15P15T Datasheet
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