N-channel enhancement mode power MOSFET featuring 85V drain-source voltage and 160A continuous drain current. This single element transistor utilizes TrenchFET process technology and offers a low drain-source on-resistance of 6mΩ at 10V. Packaged in a TO-220 through-hole configuration with 3 pins and a tab, it supports a maximum power dissipation of 360W and operates across a wide temperature range of -55°C to 175°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Ixys IXTP160N085T technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.66(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 9.15(Max) |
| Seated Plane Height (mm) | 21.84(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 85V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 160A |
| Maximum Drain Source Resistance | 6@10VmOhm |
| Typical Gate Charge @ Vgs | 164@10VnC |
| Typical Gate Charge @ 10V | 164nC |
| Typical Input Capacitance @ Vds | 6400@25VpF |
| Maximum Power Dissipation | 360000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 6D7E2 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Ixys IXTP160N085T Datasheet
Download the complete datasheet for Ixys IXTP160N085T to view detailed technical specifications.
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