N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 180A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 6.4mΩ drain-source resistance. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 480W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 31ns fall time and a 42ns turn-off delay time, with an input capacitance of 6.9nF.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power480W
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Technical Specifications
Ixys IXTP180N10T technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6.4mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 31ns |
| Input Capacitance | 6.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 480W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 480W |
| Rds On Max | 6.4mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 42ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP180N10T Datasheet
Download the complete datasheet for Ixys IXTP180N10T to view detailed technical specifications.
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