N-channel power MOSFET, 1200V drain-source breakdown voltage, 3A continuous drain current, and 4.5 ohm drain-source on-resistance. Features a TO-220AB plastic package for through-hole mounting, 200W maximum power dissipation, and a 5V threshold voltage. Operates from -55°C to 150°C with a 1.35nF input capacitance and 18ns fall time. RoHS compliant.
PackageTO-220
Current Rating3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP3N120 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 1.1kV |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 4.5R |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 32ns |
| DC Rated Voltage | 1.2kV |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP3N120 Datasheet
Download the complete datasheet for Ixys IXTP3N120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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