N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.9 ohm drain-source resistance (Rds On Max) and 70W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 22ns fall time and 58ns turn-off delay time, with an input capacitance of 411pF.
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Ixys IXTP3N60P technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.9R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 411pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 2.9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 58ns |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
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