N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 3A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.9 ohm drain-source resistance (Rds On Max) and 70W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 22ns fall time and 58ns turn-off delay time, with an input capacitance of 411pF.
PackageTO-220
Current Rating3A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXTP3N60P technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
2.9R
Drain to Source Voltage (Vdss)
600V
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
411pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Rds On Max
2.9R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PolarHV™
Threshold Voltage
5.5V
Turn-Off Delay Time
58ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP3N60P Datasheet
Download the complete datasheet for Ixys IXTP3N60P to view detailed technical specifications.
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