Ixys
IXTP48N20T
Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
Power Field-Effect Transistor, 48A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power250W
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Technical Specifications
Ixys IXTP48N20T technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 46ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXTP48N20T Datasheet
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