IXTP50N25T

Power Field-Effect Transistor, 50A I(D), 250V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

PackageTO-220-3

MountingThrough Hole

PolarityN-CHANNEL

Power400W

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Ixys IXTP50N25T technical specifications.

Package/Case	TO-220-3
Continuous Drain Current (ID)	50A
Drain to Source Breakdown Voltage	250V
Drain to Source Resistance	60mR
Drain to Source Voltage (Vdss)	250V
Gate to Source Voltage (Vgs)	30V
Input Capacitance	4nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	400W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	400W
Rds On Max	50mR
RoHS Compliant	Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.