The IXTP60N10T is a N-Channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 60A and a drain to source breakdown voltage of 100V. The device is packaged in a TO-220-3 package and is lead free. It is RoHS compliant and has a maximum power dissipation of 176W.
Sign in to ask questions about the Ixys IXTP60N10T datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Ixys IXTP60N10T technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 18MR |
| Fall Time | 37ns |
| Input Capacitance | 2.65nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 176W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 176W |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | TrenchMV™ |
| Turn-Off Delay Time | 43ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXTP60N10T to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
