Ixys
IXTP80N10T
Power Field-Effect Transistor, 80A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power230W
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Technical Specifications
Ixys IXTP80N10T technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
100V
Fall Time
48ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.04nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
230W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
230W
Rds On Max
14mR
RoHS Compliant
Yes
Series
TrenchMV™
Turn-Off Delay Time
40ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXTP80N10T Datasheet
Download the complete datasheet for Ixys IXTP80N10T to view detailed technical specifications.
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